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| SUM70N04-07L New Product Vishay Siliconix N-Channel 40-V (D-S) 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 40 FEATURES rDS(on) (W) ID (A) 70 a 67 0.0074 @ VGS = 10 V 0.011 @ VGS = 4.5 V D TrenchFETr Power MOSFET D 175_C Junction Temperature D Low Threshold APPLICATIONS D Motor Control D Automotive - 12-V Boardnet D TO-263 G G DS S Top View Ordering Information: SUM70N04-07L N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb Maximum Power Dissipationb Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C TA = 25_Cd TC = 25_C TC = 125_C Symbol VDS VGS ID IDM IAR EAR PD TJ, Tstg Limit 40 "20 70a 47 120 40 80 100c 3.75 - 55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient Junction-to-Case Notes a. Package limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating. d. When mounted on 1" square PCB (FR-4 material). Document Number: 72345 S-31617--Rev. A, 11-Aug-03 www.vishay.com PCB Mountd Symbol RthJA RthJC Limit 40 1.4 Unit _C/W 1 SUM70N04-07L Vishay Siliconix New Product SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VDS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 32 V, VGS = 0 V Zero Gate Voltage Drain Current g IDSS VDS = 32 V, VGS = 0 V, TJ = 125_C VDS = 32 V, VGS = 0 V, TJ = 175_C On-State Drain Currenta ID(on) VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 30 A Drain-Source On-State Resistancea rDS(on) VGS = 4.5 V, ID = 10 A VGS = 10 V, ID = 30 A, TJ = 125_C VGS = 10 V, ID = 30 A, TJ = 175_C Forward Transconductancea gfs VDS = 15 V, ID = 30 A 20 100 0.006 0.0085 0.0074 0.011 0.012 0.015 S W 40 V 1 3 100 1 50 250 A m mA nA Symbol Test Condition Min Typ Max Unit Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Gate Resistance Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Ciss Coss Crss Qg Qgs Qgd RG td(on) tr td(off) tf VDD = 20 V, RL = 0.4 W ID ^ 50 A, VGEN = 10 V, RG = 2.5 W VDS = 20 V, VGS = 10 V, ID = 50 A , , VGS = 0 V, VDS = 25 V, f = 1 MHz 2800 320 190 50 10 10 2.0 11 20 40 15 20 30 60 25 ns W 75 nC pF Source-Drain Diode Ratings and Characteristics (TC = Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IS ISM VSD trr IRM(REC) Qrr 25_C)b 66 100 IF = 50 A, VGS = 0 V 1.0 30 IF = 50 A, di/dt = 100 A/ms m 1.6 0.024 1.5 50 2.4 0.06 A V ns A mC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com 2 Document Number: 72345 S-31617--Rev. A, 11-Aug-03 SUM70N04-07L New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 100 VGS = 10 thru 5 V 80 I D - Drain Current (A) 4V I D - Drain Current (A) 80 100 Vishay Siliconix Transfer Characteristics 60 60 40 40 TC = 125_C 20 20 3V 0 0 1 2 3 4 5 6 25_C 0 0.0 - 55_C 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Transconductance 150 TC = - 55_C 25_C r DS(on) - On-Resistance ( W ) 120 g fs - Transconductance (S) 0.016 On-Resistance vs. Drain Current 0.012 VGS = 4.5 V 0.008 VGS = 10 V 90 125_C 60 0.004 30 0 0 10 20 30 40 50 60 0.000 0 20 40 60 80 100 ID - Drain Current (A) ID - Drain Current (A) Capacitance 4000 10 Gate Charge 3200 C - Capacitance (pF) Ciss 2400 V GS - Gate-to-Source Voltage (V) 8 VDS = 20 V ID = 50 A 6 1600 4 800 Crss 0 8 Coss 2 0 0 16 24 32 40 0 10 20 30 40 50 VDS - Drain-to-Source Voltage (V) Document Number: 72345 S-31617--Rev. A, 11-Aug-03 Qg - Total Gate Charge (nC) www.vishay.com 3 SUM70N04-07L Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2.0 VGS = 10 V ID = 20 A r DS(on) - On-Resistance (W) (Normalized) 1.7 I S - Source Current (A) 100 Source-Drain Diode Forward Voltage 1.4 TJ = 150_C 10 TJ = 25_C 1.1 0.8 0.5 - 50 - 25 0 25 50 75 100 125 150 175 1 0 0.3 0.6 0.9 1.2 TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V) Drain Source Breakdown vs. Junction Temperature 54 52 ID = 10 mA V (BR)DSS (V) 50 48 46 44 42 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (_C) www.vishay.com 4 Document Number: 72345 S-31617--Rev. A, 11-Aug-03 SUM70N04-07L New Product THERMAL RATINGS Maximum Avalanche and Drain Current vs. Case Temperature 100 1000 Vishay Siliconix Safe Operating Area, Junction-to-Case 80 I D - Drain Current (A) I D - Drain Current (A) 100 10 ms 100 ms 60 Limited By Package 40 10 Limited by rDS(on) 1 ms 10 ms dc, 100 ms 20 1 TC = 25_C Single Pulse 0 0 25 50 75 100 125 150 175 0.1 0.1 1 10 100 TC - Case Temperature (_C) VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.02 Single Pulse 0.05 0.01 10 -4 10 -3 10 -2 Square Wave Pulse Duration (sec) 10 -1 1 Document Number: 72345 S-31617--Rev. A, 11-Aug-03 www.vishay.com 5 |
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